Simulation for Optimization of Mask Error Enhancement Factor by Design of Experiments in Both Dry and Immersion ArF Lithography
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概要
- 論文の詳細を見る
Simulations for the optimization of the mask error enhancement factor (MEEF) by using Taguchi's design of experiment (DOE) method in both dry and immersion ArF lithography have been demonstrated here. By DOE, MEEF has been successfully reduced, and the process window has also been enlarged. Furthermore, in immersion lithography, MEEF has been significantly reduced, and resolution is also enhanced. In this study, we determined the optimal process and optical parameters to enlarge the process window and reduce MEEFs for different types of mask by DOE.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-08-15
著者
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Loong Wen-an
Institute Of Applied Chemistry National Chiao Tung University
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Hu Ji-ren
Institute of Applied Chemistry, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, Republic of China
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Yeh Kwei-tin
Institute of Applied Chemistry, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, Republic of China
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Lin Chih-hung
Institute of Applied Chemistry, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, Republic of China
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