Oxidation of GaAs Surface by Oxygen Plasma and Its Application as an Antireflection Layer

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概要

• 論文の詳細を見る

• The optical reflectivity of a GaAs wafer is found to decrease from about 45% down to about 5% for both the g-line and i-line by oxidation in low-power oxygen plasma at 300℃ for 4 hours. The oxide layer on the GaAs top surface used as an in situ antireflection layer for optical microlithography is demonstrated to be effective.

• 社団法人応用物理学会の論文
• 1991-07-15

著者

• Loong W‐a

  National Chiao Tung Univ. Hsin‐chu Twn

• Chang Hong-long

  Institute Of Applied Chemistry National Chiao Tung University

• LOONG Wen-An

  Institute of Applied Chemistry, National Chiao Tung University

• Loong Wen-an

  Institute Of Applied Chemistry National Chiao Tung University

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• Oxidation of GaAs Surface by Oxygen Plasma and Its Application as an Antireflection Layer
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• Modified Reflectance–Transmittance Method for the Metrology of Thin Film Optical Properties
• Simulation for Optimization of Mask Error Enhancement Factor by Design of Experiments in Both Dry and Immersion ArF Lithography
• Simulations of Mask Error Enhancement Factor in 193 nm Immersion Lithography
• Simulation of Applications of High-Transmittance Embedded Layer in Transmittance Control Mask and Optimization of Attenuated Phase-Shifting Mask by Design of Experiment

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