AlSi_xO_y as a High-Transmittance Embedded Material of Ternary Attenuated Phase-Shifting Mask and Correlation between Chemical Composition and Optical Properties of AlSi_xO_y in 193nm Lithography
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概要
- 論文の詳細を見る
- 2000-12-30
著者
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Loong Wen-an
Institute Of Applied Chemistry National Chiao Tung University
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Lin Cheng-ming
Institute Of Applied Chemistry National Chiao Tung University
関連論文
- AlSi_xO_y as a High-Transmittance Embedded Material of Ternary Attenuated Phase-Shifting Mask and Correlation between Chemical Composition and Optical Properties of AlSi_xO_y in 193nm Lithography
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- Simulation for Optimization of Mask Error Enhancement Factor by Design of Experiments in Both Dry and Immersion ArF Lithography
- Simulations of Mask Error Enhancement Factor in 193 nm Immersion Lithography
- Simulation of Applications of High-Transmittance Embedded Layer in Transmittance Control Mask and Optimization of Attenuated Phase-Shifting Mask by Design of Experiment