Simulations of Mask Error Enhancement Factor in 193 nm Immersion Lithography
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概要
- 論文の詳細を見る
In general, better resolution and lower mask error enhancement factor (MEEF) are obtained when a higher numerical aperture (NA) is used. However, simulations in this study show that, if $Y$-polarized light and off-axis illuminations were used, higher NA leads to higher MEEF for smaller and dense feature line sizes in 193 nm immersion lithography. The reversal of the MEEF was clearly observed, especially in the presence of a dipole. When the feature size decreased to the resolution limit, the MEEF rose enormously. Simulations also show that the MEEF is inversely proportional to the cubic root of image contrast in most cases in this study.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Loong Wen-an
Institute Of Applied Chemistry National Chiao Tung University
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Yeh Kwei-tin
Institute of Applied Chemistry, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, Republic of China
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Loong Wen-an
Institute of Applied Chemistry, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan, Republic of China
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