keV Ion-Beam-Exposed Poly(methylisopropenylketone) and Poly(phenylisopropenylketone)
スポンサーリンク
概要
- 論文の詳細を見る
The exposure characteristics of poly(methylisopropenylketone) (PMIPK) and poly(phenylisopropenylketone) (PPIPK) exposed to 40 and 80 keV H^+ and B^+ ion beams have been studied. It is found that the electron-rich phenyl group in PPIPK has increased stopping power for the bigger B^+ ion, but not for the smaller H^+ ion. For the same reason, the main chain scissioning of PPIPK is slower than that of PMIPK when they are exposed to B^+, but not to H^+, under the same exposure conditions. Linear relationships are found with simulation parameter A which stands for exposure efficiency of the ion beam as a function of exposure doses (keV×ion fluence) for a specific ion-exposed polymer within the used energy range.
- 社団法人応用物理学会の論文
- 1991-03-15
著者
-
LOONG Wen-An
Institute of Applied Chemistry, National Chiao Tung University
-
Loong Wen-an
Institute Of Applied Chemistry National Chiao Tung University
-
PENG Nien-tsu
Institute of Applied Chemistry, National Chiao Tung University
-
Peng Nien-tsu
Institute Of Applied Chemistry National Chiao Tung University
関連論文
- AlSi_xO_y as a High-Transmittance Embedded Material of Ternary Attenuated Phase-Shifting Mask and Correlation between Chemical Composition and Optical Properties of AlSi_xO_y in 193nm Lithography
- Oxidation of GaAs Surface by Oxygen Plasma and Its Application as an Antireflection Layer
- keV Ion-Beam-Exposed Poly(methylisopropenylketone) and Poly(phenylisopropenylketone)
- Modified Reflectance–Transmittance Method for the Metrology of Thin Film Optical Properties
- Simulation for Optimization of Mask Error Enhancement Factor by Design of Experiments in Both Dry and Immersion ArF Lithography
- Simulations of Mask Error Enhancement Factor in 193 nm Immersion Lithography
- Simulation of Applications of High-Transmittance Embedded Layer in Transmittance Control Mask and Optimization of Attenuated Phase-Shifting Mask by Design of Experiment