Simultaneous Monitoring of Hydrogen Generation and Flat-Band Potential by Measuring Bias Dependent Photoluminescence of n-Type GaN/Electrolyte System
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概要
- 論文の詳細を見る
In determining the flat-band potential of n-type GaN in an electrolyte solution by measuring the bias dependence of photoluminescence (PL) intensity, it is shown that, as voltage is applied toward a cathodic direction, the intensities of band-edge and yellow luminescences saturate and PL excitation light is scattered by hydrogen bubbles on a GaN surface simultaneously. The onset voltage of scattered light intensity is in good agreement with voltage showing PL intensity saturation, indicating that the monitoring of scattered light can be used as a technique for detecting hydrogen generation with a high sensitivity. The flat-band potential of n-type GaN thus determined is $-(0.071\times\text{pH}+0.582)$ V vs Ag–AgCl for a carrier concentration of $2.8\times 10^{19}$ cm-3, which is a larger pH dependence than that expected by Nernst's equation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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Narumi Toru
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Morita Ryusuke
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Kobayashi Naoki
Department Of Applied Physics And Chemistry The University Of Electro-communications
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Morita Ryusuke
Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan
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Kobayashi Naoki
Department of Applied Chemistry, Faculty of Engineering, Osaka University
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