Effect of Oxygen Plasma Irradiation on Hydrogen Silsesquioxane Nanopatterns Replicated by Room-Temperature Nanoimprinting

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We investigated the effect of oxygen (O2) plasma irradiation on hydrogen silsesquioxane (HSQ) patterns replicated by room-temperature nanoimprinting. The HSQ-imprinted patterns with rectangular shapes changed when heated to 200 °C. Furthermore, they disappeared immediately when they were placed on a hot plate at a temperature of 300 °C. In contrast, O2 plasma preirradiation of HSQ-imprinted nanostructures prevented the pattern deformation during postbaking. Even at the high annealing temperature of 1000 °C, HSQ-replicated patterns with 200 nm linewidth, retained its initial pattern profiles. The measured water contact angle of O2-plasma-irradiated HSQ surface decreased from 104 to 25°. The relative intensity of O 1s/Si 2p of the O2-irradiated HSQ surface, measured by X-ray photoemission spectroscopy increased from 3.13 to 4.23. These values were very close to those of thermally grown SiO2 (26.2° and 4.87).
2006-11-15