Step-and-Repeat Photo-Nanoimprint System Using Active Orientation Head
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概要
- 論文の詳細を見る
An active orientation head was designed and installed into a step-and-repeat photo-nanoimprint system. The characteristics of the passive part of the active orientation head and compliant contact function as a basic function were evaluated. Feedback control of the active orientation head resulted in 50% load deviation at four locations to within 10%. In addition, asymmetrical load control was realized, which is one of the additional functions of the active orientation head. The automatic photo-nanoimprint sequence was demonstrated, in which the imprint load was controlled to within 1.3% of the target value. In 50 min operation, 25 dies were imprinted on a 4-inch wafer. Bright spots are visible to the eye in the dark-field illumination at each location where patterns should be found. Similar patterns 100–300 nm wide on different dies were observable by optical microscopy. Scanning electron microscope revealed smooth patterns with a half pitch of 100 nm fabricated by the step-and-repeat photo-nanoimprint system.
- 2004-06-15
著者
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KURASHIMA Yuichi
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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HIROSHIMA Hiroshi
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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KIM Sang
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Scie
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MUNEISHI Takeshi
Kyocera Corporation
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Komuro Masanori
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Kurashima Yuichi
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hiroshima Hiroshi
MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hiroshima Hiroshi
MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Muneishi Takeshi
Kyocera Corporation, 1166-6, Nagatanino, Hebimizo-cho, Yohkaichi, Shiga 527-8555, Japan
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- Step-and-Repeat Photo-Nanoimprint System Using Active Orientation Head
- Fabrication of Low Line Edge Roughness Mold for Photo-Nanoimprint
- Reducing Photocurable Polymer Pattern Shrinkage and Roughness during Dry Etching in Photo-Nanoimprint Lithography
- Fabrication of Low Line Edge Roughness Mold by Spin On Glass (SOG) Replica Method
- Line Width Reproducibility of Photo-Nanoimprints
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- Elimination of Pattern Defects of Nanoimprint under Atmospheric Conditions