Nanoscale Device Modeling and Simulation: Fin Field-Effect Transistor (FinFET)
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概要
- 論文の詳細を見る
The device performance of nanoscale fin field-effect transistor (FinFET) was investigated by numerically solving coupled Poisson-Schrödinger equations in a self-consistent manner. The number of fins was varied in order to optimize the current driving capability of FinFET. The simulation results were compared with the experimental results in order to verify the validity of the proposed quantum mechanical approach. Device optimization was theoretically performed in order to suppress the short-channel effect in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. Quantum mechanical simulation results were also compared with the results from the classical approach in order to understand the influence of electron confinement. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Won Taeyoung
Department Of Electrical Engineering National It Research Center For Computational Electronics Inha
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Kim Kidong
Department Of Electrical Engineering School Of Engineering Inha University
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Seo Jihyun
Department of Electrical Engineering, School of Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Kwon Ohseob
Department of Electrical Engineering, School of Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Won Taeyoung
Department of Electrical Engineering, School of Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Kim Kidong
Department of Electrical Engineering, School of Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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- Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator
- Performance Comparison between Asymmetric Polycrystalline Silicon Gate and TiN Gate Fin-Shaped Field Effect Transistors
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