Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• WON Taeyoung

  Department of Electrical Engineering, School of Engineering, Inha University

• Park Il-soo

  Department Of Electrical Engineering School Of Engineering Inha University

• KIM Kidong

  Department of Electrical Engineering, School of Engineering, Inha University

• Kim Kidong

  Department Of Electrical Engineering School Of Engineering Inha University

関連論文

• Fast and Accurate Simulation for Topography in Nanometer Semiconductor Process
• Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator
• Two-Dimensional Quantum Mechanical Modeling of Strained-Si FinFETs on SiGe-On-Insulator(SGOI)
• Nanoscale Device Modeling and Simulation: Fin Field-Effect Transistor (FinFET)
• Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator

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