Atomistic Modeling of Boron Diffusion with Germanium Pre-amorphization for Ultra Shallow S/D Junction in nanometer-scale PMOS Devices
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Won Taeyoung
Department Of Electrical Engineering National It Research Center For Computational Electronics Inha
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Won Taeyoung
Department Of Electrical Engineering School Of Engineering Inha University National It Research Cent
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Kim Byeong-jun
Department Of Electrical Engineering School Of Engineering Inha University National It Research Cent
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YOO Jae-Hyun
Department of Electrical Engineering, School of Engineering, Inha University National IT Research Ce
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Yoo Jae-hyun
Department Of Electrical Engineering School Of Engineering Inha University National It Research Cent
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- Device Optimization of Multiple-Channel Field Effect Transistor with Two Dimensional Poisson–Schrödinger Solver
- Ab-initio Study on Energy Barrier for Neutral Indium Migration in a Silicon Substrate
- Atomistic Modeling of Boron Diffusion with Germanium Pre-amorphization for Ultra Shallow S/D Junction in nanometer-scale PMOS Devices
- Nanoscale Device Modeling and Simulation: Fin Field-Effect Transistor (FinFET)
- Kinetic Monte Carlo Modeling of Boron Diffusion in Strained Silicon
- Two-Dimensional Quantum-Mechanical Modeling and Simulation of Strained-Si Fin Field Effect Transistor (FinFET) on SiGe-On-Insulator
- Performance Comparison between Asymmetric Polycrystalline Silicon Gate and TiN Gate Fin-Shaped Field Effect Transistors
- Topography Simulation for Nanometer Semiconductor Process