Device Optimization of Multiple-Channel Field Effect Transistor with Two Dimensional Poisson–Schrödinger Solver
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概要
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In this paper, we report our numerical study of the optimization of the short-channel performance of a multiple-channel field effect transistor (FET), wherein the center gate is placed at the center of a fin to form multiple channels. The distinctive features of a multiple-channel FET are carefully investigated using our simulator, solving the coupled Poisson–Schrödinger equations in a self-consistent manner. To analyze the short-channel effects of a multiple-channel FET, device characteristics including subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering were investigated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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Won Taeyoung
Department Of Electrical Engineering School Of Engineering Inha University
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Won Taeyoung
Department Of Electrical Engineering National It Research Center For Computational Electronics Inha
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Kim Joong-sik
Department of Electrical Engineering, School of Engineering, Inha University, 253 Yonghyun-dong, Nam
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Kim Joong-sik
Department Of Electrical Engineering School Of Engineering Inha University
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