Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
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概要
- 論文の詳細を見る
A novel magnetic random access memory (MRAM) cell consisting of a magnetic tunnel junction (MTJ) and negative differential resistance (NDR) device connected in parallel is described. The NDR characteristics are used to increase the effective magnetoresistance (MR) ratio of the MTJ. Circuit simulations were performed for the memory cell with a triple-barrier resonant-tunneling diode (RTD) to confirm the efficacy of the basic operation. Furthermore, a hybrid circuit built from the CoFe-based MTJ and GaAs-based interband tunnel diode was fabricated. The circuit showed that the effective MR ratio was enhanced almost tenfold from its original value of 11% to 103%.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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MARUKAME Takao
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokk
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Honma Satoshi
Division Of Electronics And Information Engineering Hokkaido University
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Marukame Takao
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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