Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions
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概要
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The effect of MgO barrier insertion on a spin-valve signal in a four-terminal non-local geometry and on tunneling anisotropic magnetoresistance (TAMR) characteristics in a three-terminal geometry was investigated in Co50Fe50/n-GaAs heterojunctions. Inserting a MgO barrier significantly enhanced the spin-valve signal amplitude by a factor of 38, and the sign of spin polarization was opposite that of a sample without a MgO barrier. The TAMR effect was suppressed in the case of a Co50Fe50/MgO/n-GaAs junction. This suppression of the TAMR effect can be explained by the suppression of Fermi-level pinning and the lowering of Schottky barrier height.
- 2012-02-25
著者
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Uemura Tetsuya
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Matsuda Ken-ichi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Akiho Takafumi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Harada Masanobu
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Uemura Tetsuya
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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