Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
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概要
- 論文の詳細を見る
A novel magnetic random access memory (MRAM) cell consisting of a magnetic tunnel junction (MTJ) and a tunnel diode connected in series is described. The negative differential resistance (NDR) characteristics of the tunnel diode were used to increase the tunneling magnetoresistance (TMR) ratio of the MTJ. The basic operation was successfully confirmed by both simulation and experiment. The fabricated circuit showed that the effective MR ratio was enhanced from its original value of 15 to 890%. In the simulation, a sufficient operating margin of the bias voltage was obtained by using the MTJ with its TMR ratio of 30%.
- Japan Society of Applied Physicsの論文
- 2004-01-15
著者
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MARUKAME Takao
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokk
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Honma Satoshi
Division Of Electronics And Information Engineering Hokkaido University
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Honma Satoshi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Marukame Takao
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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