MARUKAME Takao | Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokk
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概要
- 同名の論文著者
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkの論文著者
関連著者
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MARUKAME Takao
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokk
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Honma Satoshi
Division Of Electronics And Information Engineering Hokkaido University
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UEMURA Tetsuya
Division of Electronics for Informatics, Hokkaido University
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YAMAMOTO Masafumi
Division of Electronics for Informatics, Hokkaido University
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Marukame Takao
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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MATSUDA Ken-ichi
Division of Electronics for Informatics, Hokkaido University
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Kasahara Takashi
Division Of Urology Department Of Regenerative And Transplant Medicine Graduate School Of Medical An
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Matsuda Ken-ichi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Honma Satoshi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
著作論文
- Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using-Full-Heusler Alloy Co_2Cr_Fe_Al Thin Film and MgO Tunnel Barrier
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
- Epitaxial Growth of Fe/MgO/Fe Heterostructures on SrTiO3(001) Substrates by Magnetron Sputtering
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode