Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer
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概要
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Fully epitaxial magnetic tunnel junctions (MTJs) with Co50Fe50 (CoFe) electrodes and a MgO barrier were fabricated on Ge(001) single-crystal substrates via a MgO interlayer. Microfabricated CoFe/MgO/CoFe MTJs with a 10-nm-thick MgO interlayer showed a high tunnel magnetoresistance (TMR) ratio of 218% at 293 K, which is encouraging for monolithic integration of MTJs and Ge field-effect transistors for constructing future-generation nonvolatile logic circuits featuring ultralow-power consumption. Furthermore, MTJs with even a decreased MgO interlayer thickness of 1.0 nm showed a relatively high TMR ratio of 110% at 293 K, suggesting the promise of heterostructures consisting of MTJ/MgO interlayer/Ge(001) as a key device structure for spin injection into a Ge channel from an MTJ.
- 2012-09-25
著者
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MATSUDA Ken-ichi
Division of Electronics for Informatics, Hokkaido University
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Uemura Tetsuya
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Li Gui-fang
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Taira Tomoyuki
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Liu Hong-xi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Matsuda Ken-ichi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Uemura Tetsuya
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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