Magnetic and Electrical Properties of (La,Sr)MnO3 Sputtered on SrTiO3-Buffered Si Substrate
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概要
- 論文の詳細を見る
LaSrMnO3 (LSMO) thin films were grown on SrTiO3(STO)-buffered Si(001) substrates by RF magnetron sputtering, and their magnetic and electrical properties as well as their crystalline structures were characterized. The LSMO film exhibited a polycrystalline nature with a strong preferred orientation to the $c$-axis. Compared with single-crystalline samples, the electrical and magnetic properties of the LSMO films on STO-buffered Si substrates obtained in this study were different in the following points. (1) A lower metal-insulator transition temperature than the Curie temperature, $T_{\text{C}}$, determined from magnetization measurements. (2) A large negative magnetoresistance with a clear hysteresis below $T_{\text{C}}$. (3) An increased coercivity in the low temperature region below 170 K. These features can be explained by the existence of localized ferromagnetic regions and spin-polarized tunneling between them.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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UEMURA Tetsuya
Division of Electronics for Informatics, Hokkaido University
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MATSUDA Ken-ichi
Division of Electronics for Informatics, Hokkaido University
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YAMAMOTO Masafumi
Division of Electronics for Informatics, Hokkaido University
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Uemura Tetsuya
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Sekine Kenji
Division Of Electronics For Informatics Hokkaido University
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Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
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Matsuda Ken-ichi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
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Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
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