Magnetic Anisotropy Study for GaMnAs-Based Magnetic Tunnel Junction
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-11-10
著者
-
UEMURA Tetsuya
Division of Electronics for Informatics, Hokkaido University
-
SONE Takuya
Division of Electronics for Informatics, Hokkaido University
-
MATSUDA Ken-ichi
Division of Electronics for Informatics, Hokkaido University
-
YAMAMOTO Masafumi
Division of Electronics for Informatics, Hokkaido University
関連論文
- Magnetic Anisotropy Study for GaMnAs-Based Magnetic Tunnel Junction
- Production of Bacterial Cellulose with Well Oriented Fibril on PDMS Substrate
- Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using-Full-Heusler Alloy Co_2Cr_Fe_Al Thin Film and MgO Tunnel Barrier
- A Synthesis of(E)-(1-Organo-1-alkenyl)boronates by the Palladium-Catalyzed Cross-Coupling Reaction of(E)-1, 2-Bis(boryl)-1-alkenes with Organic Halides : A Formal Carboboration of Alkynes via the Diboration-Coupling Sequence
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
- Magnetic and Electrical Properties of (La,Sr)MnO3 Sputtered on SrTiO3-Buffered Si Substrate
- Magnetic and Electrical Properties of (La, Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate
- Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties
- Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer