Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties
スポンサーリンク
概要
- 論文の詳細を見る
Fully epitaxial magnetic tunnel junctions (MTJs) with a Heusler alloy Co2MnSi electrode and a MgO barrier were prepared on MgO-buffered MgO(001) substrates with various layer structures to elucidate the contribution of coherent tunneling to the spin-dependent tunneling characteristics of these MTJs, which potentially feature both the half-metallicity of Co2MnSi and coherent tunneling. MTJs consisting of (from the lower side) Co50Fe50 (CoFe)/MgO/Co2MnSi or CoFe-buffered Co2MnSi/MgO/CoFe showed almost identical, high tunnel magnetoresistance (TMR) ratios of 335% at 290 K (1049% at 4.2 K) and 340% at 290 K (879% at 4.2 K), respectively. In contrast, MTJs consisting of MgO-buffered Co2MnSi/MgO/CoFe showed a lower TMR ratio of 173% at 290 K (448% at 4.2 K). The higher TMR ratios obtained for CoFe/MgO/Co2MnSi MTJs and CoFe-buffered Co2MnSi/MgO/CoFe MTJs can be ascribed to the enhanced contribution of coherent tunneling that originated from decreased misfit dislocation densities at the lower and upper interfaces with a MgO barrier.
- 2012-09-25
著者
-
MATSUDA Ken-ichi
Division of Electronics for Informatics, Hokkaido University
-
Uemura Tetsuya
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
-
Yamamoto Masafumi
Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai
-
Liu Hong-xi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
-
Honda Yusuke
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
-
Arita Masashi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
-
Matsuda Ken-ichi
Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
-
Uemura Tetsuya
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
-
Yamamoto Masafumi
Division of Electronics and Information Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo 060-8628, Japan
関連論文
- Magnetic Anisotropy Study for GaMnAs-Based Magnetic Tunnel Junction
- Production of Bacterial Cellulose with Well Oriented Fibril on PDMS Substrate
- Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using-Full-Heusler Alloy Co_2Cr_Fe_Al Thin Film and MgO Tunnel Barrier
- A Synthesis of(E)-(1-Organo-1-alkenyl)boronates by the Palladium-Catalyzed Cross-Coupling Reaction of(E)-1, 2-Bis(boryl)-1-alkenes with Organic Halides : A Formal Carboboration of Alkynes via the Diboration-Coupling Sequence
- Magnetic and Electrical Properties of (La,Sr)MnO3 Sputtered on SrTiO3-Buffered Si Substrate
- Magnetic and Electrical Properties of (La, Sr)MnO_3 Sputtered on SrTiO_3-buffered Si Substrate
- Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier
- Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties
- Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer
- Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions
- Magnetic Anisotropy Study for GaMnAs-Based Magnetic Tunnel Junction
- Epitaxial Growth of Fe/MgO/Fe Heterostructures on SrTiO3(001) Substrates by Magnetron Sputtering
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
- Reproducibility and Accuracy in Measuring Masticatory Performance Using Test Gummy Jelly