Cu Fine Line Direct Drawing Using a Scanning Tunneling Microscope-Electroplating (EP-STM) Combination System
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概要
- 論文の詳細を見る
We have demonstrated a metal fine line arbitrary direct drawing deposition on a semiconductor using a scanning tunneling microscope (STM)-electroplating (EP) combination system (EP-STM). Using μA current regulation by the galvanostat mode with a 1-μm sample-to-probe distance and a H2SO4 aqueous solution as a starting solution where no Cu2+ ion is initially present, we have obtained Cu fine line arbitrary direct drawing deposition on Si(001) with a minimum width of ${\sim}0.7$ μm. The results indicate the controllability of confining the Cu deposition to a very localized area by the EP-STM method and the capability of submicrometer-sized continuous metal direct drawing deposition on a semiconductor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Suda Yoshiyuki
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Sekiguchi Masahiro
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Sekiguchi Masahiro
Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Tanaka Hideaki
Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Suda Yoshiyuki
Faculty of Technology, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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