Three-Valued Single-Electron Memory Array with Reading Circuits
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概要
- 論文の詳細を見る
We first demonstrate a method of realizing a multiple-valued single-electron memory device based on Monte Carlo simulation results. Using the simulation method, we demonstrate that with a memory array constructed with memory cells, each of which has a junction-capacitor-junction single-electron memory device and a reading circuit, three logical values "-1", "O", and "1" can be written, held and read, and that the memory array successfully functions as a three-valued memory array. Since the results of a logical summation of input and stored data can be stored in the cell, the memory array functions as a novel functional memory.
- 社団法人応用物理学会の論文
- 1998-12-01
著者
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Suda Yoshiyuki
Faculty Of Technology Tokyo University Of Agriculture And Technology
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YAMAMURA Kouichirou
Faculty of Technology, Tokyo University of Agriculture and Technology
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Yamamura Kouichirou
Faculty Of Technology Tokyo University Of Agriculture And Technology
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