Si Atomic-Layer Epitaxy Using Thermally Cracked Si_2H_6
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Suda Y
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Suda Yoshiyuki
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Suda Y
Faculty Of Technology Tokyo University Of Agriculture And Technology
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MISATO Yasuhiro
Faculty of Technology, Tokyo University of Agriculture and Technology
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SHIRATORI Daiju
Faculty of Technology, Tokyo University of Agriculture and Technology
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Misato Yasuhiro
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Shiratori Daiju
Faculty Of Technology Tokyo University Of Agriculture And Technology
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- Mechanisms and Growth Characteristics of Si Sub-Atomic-Layer Epitaxy from Si_2H_6
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