Signal Transmission Circuit Using Single Electron Tunneling Junctions
スポンサーリンク
概要
- 論文の詳細を見る
- 1998-09-07
著者
-
Suda Yoshiyuki
Faculty Of Technology Tokyo University Of Agriculture And Technology
-
YAMAMURA Kouichirou
Faculty of Technology, Tokyo University of Agriculture and Technology
-
Yamamura Kouichirou
Faculty Of Technology Tokyo University Of Agriculture And Technology
関連論文
- Effects of Oxidation on Electronic States and Photoluminescence Properties of Porous Si
- Surface Structures and Photoluminescence Mechanisms of Porous Si
- Photoemission Study of the Spectral Function of V_2O_3 in Relation to the Recent Quantum Monte Carlo Study
- Si Atomic-Layer Epitaxy Using Thermally Cracked Si_2H_6
- Si Atomic-Layer-Epitaxy Using Thermally-Cracked-Si_2H_6
- Effects of Anodization Current Density on Photoluminescence Properties of Porous Silicon
- Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy
- Bidirectional Signal Transmission Circuit Using Single Electron Tunneling Junctions
- Double-Quantum-Well Si_Ge_x/Si Electron Resonant Tunneling Diode with a High Peak-to-Valley Ratio at RT
- Three-Valued Single-Electron Memory Array with Reading Circuits
- Improvement of Operation Reliability at Room Temperature for a Single Electron Pump (Special Issue on Technology Challenges for Single Electron Devices)
- Single Electron Three-Valued Memory Array with Reading Circuits
- Novel Single Electron Logic Circuit Family Constructed with Signal Transmission Structures
- Si_f120Ge_x/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧ 180 at RT Formed Using an Annealed Thin Multilayer Buffer
- Signal Transmission Circuit Using Single Electron Tunneling Junctions
- Memory Function of a SiO_2/β-SiC/Si MIS Diode
- Mechanisms and Growth Characteristics of Si Sub-Atomic-Layer Epitaxy from Si_2H_6
- Ge Dot Array Formation Using Small Convex Position Anchors
- Strain-Relief Mechanisms of Stepwise Ge composition Multilayer Buffers and High PVCR Si/Si_Ge_x ASDQW RTD Formed with Triple-Layer Buffer
- Cu Fine Line Direct Drawing Using a Scanning Tunneling Microscope-Electroplating (EP-STM) Combination System