Si_<1-x>f120Ge_x/Si Triple-Barrier RTD with a Peak-to-Valley Ratio of ≧ 180 at RT Formed Using an Annealed Thin Multilayer Buffer
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Suda Yoshiyuki
Faculty Of Technology Tokyo University Of Agriculture And Technology
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YAMAGUCHI SATOSHI
Faculty of Agriculture, Ehime University
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MEGURO Akihiko
Faculty of Technology, Tokyo University of Agriculture and Technology
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Meguro Akihiko
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Yamaguchi Satoshi
Faculty Of Agriculture Ehime University
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Yamaguchi Satoshi
Faculty Of Technology Tokyo University Of Agriculture And Technology
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