Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae
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概要
- 論文の詳細を見る
Effective lifetimes measured by the frequency-dependent surface photovoltage method, become, more or less, shorter than volume lifetimes in a square pillar because of the carrier recombination at the lateral surfaces of the pillar. The volume lifetime in the pillar can be estimated using empirical equations based on the position-dependent effective lifetimes on the pillar surface. Thus, the maximum effective lifetime of 18.1 ms in an n-type silicon pillar of $20\times 20\times 80$ mm3 corresponds to a volume lifetime of 22.7 ms. The estimated lifetime is, however, longer than that of 18.0 ms obtained by the photoconductive decay method. The reason for this is discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Ogawa Arito
Department Of Electronics Tohoku Institute Of Technology
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Munakata Chusuke
Department Of Electrical Engineering And Computer Sciences University Of California
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Ogawa Arito
Department of Electronics, Tohoku Institute of Technology, 6 Futatsuzawa, Taihaku-ku, Sendai 982-8588, Japan
関連論文
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- Analysis of the β-Conductive Signal Excited with a Pulsed Electron Beam
- Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers
- Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-μm-Thick Silicon Wafer
- Lateral Size Effect in the Lifetime Measurement by Frequency-Dependent Surface Photovoltage Technique
- Charge Storage Effect in the Microwave Detected Photoconductive Decay Method
- Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae