Analysis of the β-Conductive Signal Excited with a Pulsed Electron Beam
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概要
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Dependences of the phase and the absolute value of the β-conductive signal upon the frequency of an exciting electron beam and the surface recombination velocity on semiconductors are reported. The penetration depth of the impinging electron beam into the surface of the specimen is assumed to be much shorter than the diffusion length for minority carriers, while the dimensions of the semiconductor specimen bar are assumed to be fairly large compared to the diffusion length. The absolute value of the β-condcutive signal excited with a pulsed electron beam decreases monotonously when the angular frequency ω of the beam exceeds the reciprocal of the lifetime τ_p for minority carriers. The delaying phase angle referred to the beam frequency increases from 0 to 90 degrees as ωτ_p increases. The absolute value and the phase angle also depend upon the surface recombination velocity s_f at the beam-irradiated point of the bar. Possible applications of the results to experiments are suggested.
- 社団法人応用物理学会の論文
- 1972-09-05
著者
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Munakata Chusuke
Department Of Electrical Engineering And Computer Sciences University Of California
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