Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-μm-Thick Silicon Wafer
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概要
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On numerically resolving the continuity equation for excess photocarriers, three-dimensional-type carrier distribution profiles in time and space have been obtained using a commercially available computer code. These pictures are useful for the quick understanding of the basic principle of the microwave-detected photoconductive decay method.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-15
著者
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Munakata Chusuke
Department Of Electrical Engineering And Computer Sciences University Of California
関連論文
- Frequency Dependence of the Diffusion Length for Excess Minority Carriers Generated with a Pulsed Electron Beam
- Charge Storage Effect in the Microwave Detected Photoconductive Decay Method
- Effect of the Surface Recombination Velocity on the β-Conductive Signal
- Analysis of the β-Conductive Signal Excited with a Pulsed Electron Beam
- Separation between Surface and Volume Decay Times of Photoconductivity in p-Type Silicon Wafers
- Density Distribution Profiles of Excess Minority Carriers Injected with 904-nm-Wavelength Laser Pulse into 400-μm-Thick Silicon Wafer
- Lateral Size Effect in the Lifetime Measurement by Frequency-Dependent Surface Photovoltage Technique
- Charge Storage Effect in the Microwave Detected Photoconductive Decay Method
- Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae