Effect of the Surface Recombination Velocity on the β-Conductive Signal

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概要

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• The β-conductive signal is analysed for a thin semiconductor bar, whose two parallel surfaces are taken into consideration. When the thickness of the specimen bar is 4 times longer than the diffusion length for minority carriers, the effect of the back surface is negligible. If the penetration depth of the electron beam is very short compared to the diffusion length, the β-conductive signal is most sensitive to the surface recombination velocity of the beam-irradiated surface, while the signal is practically non-sensitive to the recombination velocition when the penetration depth is 20 times longer than the diffusion length.

• 社団法人応用物理学会の論文
• 1972-06-05

著者

• Munakata Chusuke

  Department Of Electrical Engineering And Computer Sciences University Of California

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• Lateral Size Effect in the Lifetime Measurement by Frequency-Dependent Surface Photovoltage Technique
• Charge Storage Effect in the Microwave Detected Photoconductive Decay Method
• Estimation of Volume Lifetimes in Small Square Pillars of Silicon using Empirical Formulae

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