Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma
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概要
- 論文の詳細を見る
Reactive ion beam etching (RIBE) of InP, InGaAs, InGaAsP, InAs, InAlAs and InSb was performed in a Cl2/Ar mixture using an inductively coupled plasma source. The etch rate and etch yield for InP showed the most significant variation with substrate temperature, while all the material etch rates were strongly dependent on ion energy. The etching was dominated by ion-assisted mechanisms up to ion energies of ${\sim}600$ eV and by physical sputtering at higher energies. The high density plasma accelerates etch rates predominantly by ion-neutral synergism and not by subverting the usual etch reactions.
- 2003-01-15
著者
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VAWTER G.
Sandia National Laboratories
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ABERNATHY C.
Department of Materials Science and Engineering, University of Florida
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PEARTON S.
Department of Materials Science and Engineering, University of Florida
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HAHN Y.
School of Chemical Engineering and Technology, Chonbuk National University
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Lee J.
Department Geosystem Engineering Kangwon National University
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Abernathy C.
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, U.S.A.
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Shul R.
Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185, U.S.A.
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Pearton S.
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, U.S.A.
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Lee J.
Department of Optical Engineering Inje University, Kimhae, Kyoung-nam, 621-749, Korea
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Hahn Y.
School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756, Korea
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