Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical Communication (先端デバイスの基礎と応用に関するアジアワークショップ)
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概要
- 論文の詳細を見る
We report structural and optical properties of In_<0.5>Ga_<0.5>As/GaAs quantum dots grown by atomic layer epitaxy (ALE) technique with atomic force microscope, transmission electron microscope and photoluminescence measurement. The ALE dots are grown with repeated periods of 1 mono-layer of InAs and GaAs. All reported ALE dots show 300 K-PL spectrum, and 1.276μm (FWHM:32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of In_<0.5>Ga_<0.5>As ALE dots in a 100 A-thick In_<0.1>Ga_<0.9>As well. Dependence of growth temperature on the properties of ALE dots is also reported.
- 社団法人電子情報通信学会の論文
- 2003-06-25
著者
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Lee J.
Department of Biomedical Engineering, Kyungpook National University Hospital
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Park Y.
Nano-device Research Center Korea Institute Of Science And Technology
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Lee H.
Department Of Chemistry National University Of Singapore
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Shin J.
Korea Institute Of Science And Technology Nano Device Research Center
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Lee J.
Department Of Materials Science And Engineering Korea Advance Institute Of Science And Technology
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Lee H.
Department Of Materials Science And Engineering Korea Advance Institute Of Science And Technology
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SONG J.
Nano-device Research Center, Korea Institute of Science and Technology
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SHIN J.
Nano-device Research Center, Korea Institute of Science and Technology
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LIM J.
Nano-device Research Center, Korea Institute of Science and Technology
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CHOI W.
Nano-device Research Center, Korea Institute of Science and Technology
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HAN I.
Department of Materials Science and Engineering, Korea Advance Institute of Science and Technology
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CHO W.
Nano-device Research Center, Korea Institute of Science and Technology
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LEE J.
Nano-device Research Center, Korea Institute of Science and Technology
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Han I.
Korea Institute of Science and Technology, Nano Device Research Center
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Lee H.
Department Of Anesthesiology College Of Physicians And Surgeons Of Columbia University
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Lee J.
Korea Institute Of Science And Technology Nano Device Research Center
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Han I.
Korea Institute Of Science And Technology Nano Device Research Center
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Lee J.
Department Geosystem Engineering Kangwon National University
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Choi W.
Korea Institute Of Science And Technology Nano Device Research Center
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Lim J.
Nano-device Research Center Korea Institute Of Science And Technology
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Song J.
Nano-device Research Center
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