Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
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概要
- 論文の詳細を見る
We have investigated the confined energy level of InAs quantum dots embedded in InP layer using deep-level transient spectroscopy (DLTS) measurement. The higher temperature for the capping layer growth yields a low activation energy ($E_{\text{a}}=0.56$ eV) and a low barrier height ($E_{\text{eB}}=0.18$ eV) whereas the lower temperature yields a high activation energy ($E_{\text{a}}=0.82$ eV) and high barrier height ($E_{\text{eB}}=0.52$ eV). It was found that the higher temperature for the growth of the capping layer provides a condition for enhancing the confinement energy in InAs QDs/InP structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
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Kim J.
Seoul Univ.
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Park Y.
Nano-device Research Center Korea Institute Of Science And Technology
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HWANG H.
School of Materials Science and Engineering, Seoul National University
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PARK K.
School of Materials Science and Engineering, Seoul National University
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YOON E.
School of Materials Science and Engineering, Seoul National University
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Kim E.
Department Of Experimental Diagnostic Imaging The University Of Texas M.d. Anderson Cancer Center
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Park I.-w.
Seoul Branch Korea Basic Science Institute
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Kim J.
Departamento De Ciencias Exatas E Da Terra Universidade Federal De Sao Paulo
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Kim J.
Department of Physics and Quantum Photonic SRC, Hanyang University, Seoul 133-791, Korea
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Park I.-W.
Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea
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Kim J.
Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea
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Kim E.
Department of Physics and Quantum Photonic SRC, Hanyang University, Seoul 133-791, Korea
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Kim E.
Department of Acupoint & Meridian, College of Oriental Medicine, Semyung University
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