Effects of thermal annealing on optical and structural properties of 1.3 μm digital-alloy InGaAlAs MQW (先端デバイスの基礎と応用に関するアジアワークショップ)
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概要
- 論文の詳細を見る
Effect of rapid thermal annealing on optical and structural properties of 1.3μm digital-alloy InGaAlAs MQW structure was studied with 300 K-PL, transmission electron microscopy, and scanning tunneling microscopy. 300K-PL peak intensity increases abruptly above the annealing temperature (T_<RTA>) of 625℃. Above T_<RTA>> 800℃, 300K-PL spectrum shows decease of PL intensity and slight blue-shift. The curing and degradation process of digital-alloy MQWs are investigated in the view of congruent sublimation temperature.
- 社団法人電子情報通信学会の論文
- 2003-06-25
著者
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KIM J.
Department of Physiology, School of Dentistry and Dental Research Institute, Seoul National Universi
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Lee Y.
Department Of Zoology National University Of Singapore
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Kim J.
Department Of Information And Communications Kwangju Institute Of Science And Technology
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Bae S.
Department Of Information And Communications Kwangju Institute Of Science And Technology
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Bae S.
Department Of Dermatology Nagasaki University School Of Medicine
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Lee Y.
Department Of Geneticopathology Department Of Radiation Biology Research Institute For Nuclear Medic
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Lee Y.
Department Of Information And Communications Kwangju Institute Of Science And Technology
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SONG J.
Nano-device Research Center, Korea Institute of Science and Technology
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OFFERMANS P.
Department of Semiconductor Physics, Eindhoven University of Technology
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KOENRAAD P.
Department of Semiconductor Physics, Eindhoven University of Technology
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WOLTER J.
Department of Semiconductor Physics, Eindhoven University of Technology
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Kim J.
Department Of Conservative Dentistry Kyunghee University Dental Colledge
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Lee Y.
Department Of Anesthesiology Chang Gung Memorial Hospital Lin-kou Medical Center
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Wolter J.
Department Of Semiconductor Physics Eindhoven University Of Technology
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Koenraad P.
Department Of Semiconductor Physics Eindhoven University Of Technology
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Kim J.
Departamento De Ciencias Exatas E Da Terra Universidade Federal De Sao Paulo
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Offermans P.
Department Of Semiconductor Physics Eindhoven University Of Technology
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Song J.
Nano-device Research Center
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