Crystal Structure and Atomic Arrangement of $\delta$-Phase Sb–Te Binary Alloy
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概要
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The composition modulated Sb–Te binary thin films deposited by a RF sputtering method on SiO2/Si substrates annealed through a rapid thermal annealing process and conducted a high-resolution transmission electron microscopy (HR-TEM) study in order to investigate the atomic arrangement of the $\delta$-phase Sb–Te binary alloys which contain Te from 16 to 37 at. %. Through the comparison with HR-TEM image and diffraction patterns viewed along $\langle 2110\rangle$ and $\langle 1010\rangle$ direction, we have revealed that the $\delta$-phase Sb–Te alloy crystallized into $P\bar{3}m1$ or $R\bar{3}m$ space group whether the number of layers is the multiple of three or not. We also expect from analogous Bi–Te system in earlier reports that as the Sb/Te ratio increases, total number of Sb layers in a unit cell increases. Therefore, based on above result, we suggested the atomic arrangement model composed of appropriate Sb2 and Sb2Te3 layer and obtained simulated images of $\langle 2110\rangle$ zone axis.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Lee J.
Department Geosystem Engineering Kangwon National University
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Kim Y.
Semiconductor R & D Lab. Hyundai Electronics Industries Co. Ltd.
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Sun C.
Department Of Electrical Engineering National Cheng Kung University
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Lee J.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
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Youm M.
Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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Kim Y.
Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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