Effect of Laser Wavelength for Surface Morphology of Aluminum Nitride Thin Films by Nitrogen Radical-Assisted Pulsed Laser Deposition

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AlN thin films were prepared on Si(100) substrates by the nitrogen radical-assisted pulsed laser deposition method at a low substrate temperature (200°C) as a function of the laser wavelength (1064, 532 and 266 nm). At the laser wavelength of 1064 nm, Al-rich AlN films were deposited and granular crystals with a diameter of 50 nm were observed on the film surface. The surface roughness ($R_{\text{a}}$) was 15 nm. At the laser wavelength of 266 nm, $c$-axis-oriented AlN thin films with smooth surfaces ($R_{\text{a}}=5$ nm) were obtained and the atomic ratio of N/Al was stoichiometric. The full width at half maximum (FWHM) value of the diffraction profile in the $2\theta/\theta$ scan mode was 0.55°. It was found that the use of an ultraviolet laser was more effective for preparing the $c$-axis-oriented AlN films with a stoichiometric concentration and smooth surfaces.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-04-15