Low Temperature Graphene Synthesis from Poly(methyl methacrylate) Using Microwave Plasma Treatment
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概要
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A graphene film having low sheet resistance (600 \Omega/sq.) was synthesized at low temperatures of 280 °C. Utilizing microwave plasma treatment, graphene films were synthesized from a solid phase on a copper surface. The full width at half maximum of the 2D-band in the Raman spectrum indicated that a high quality graphene film was formed. Cross-sectional transmission electron microscopy observation revealed that the deposited graphene films consisted of single- or double-layer graphene flakes of nanometer order on the Cu surface, which agrees with the estimated number of layers from an average optical transmittance of 96%.
- 2013-11-25
著者
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HASEGAWA Masataka
National Institute of Advanced Industrial Science and Technology (AIST)
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Ishihara Masatou
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
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Yamada Takatoshi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
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Hasegawa Masataka
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
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- Low Temperature Graphene Synthesis from Poly(methyl methacrylate) Using Microwave Plasma Treatment
- Low Temperature Graphene Synthesis from Poly(methyl methacrylate) Using Microwave Plasma Treatment