Identification of Desorption Products from the Thermal Reaction of AlN with XeF2 Vapor Using Molecular Beam Mass Spectrometry and a Time-of-Flight Technique

概要

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Thermal etching reaction of polycrystalline AlN with XeF2 has been studied over the sample temperature range $T_{\text{s}}=680--920$ K using molecular beam mass spectrometry and a time-of-flight (TOF) technique. The desorbed products detected above $T_{\text{s}}=775$ K are identified as N2 and AlF3. The N2 flux intensity increases monotonically above $T_{\text{s}}=775$ K and the AlF3 products exhibit a similar intensity profile. The translational temperature of N2 products determined is found to be about 170 K higher than $T_{\text{s}}$ above $T_{\text{s}}=825$ K although that of AlF3 is equal to the sample temperature. A probable mechanism for this reaction is proposed.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2003-04-01