EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

スポンサーリンク

概要

• 論文の詳細を見る

• Simultaneous achievement of high sensitivity and low line edge roughness (LWR) is necessary in EUV resist. The chemical reaction analysis of EUV (Extreme Ultraviolet) chemical amplified (CA) resist and acid diffusion length evaluation was carried out. In order to achieve low LWR of the CA resist, the large chemical structure of the anion of photoacid generator (PAG) is required for shortening the acid diffusion length. On the other hand, in order to increase the sensitivity, on the basis of the chemical reaction analysis using the soft x-ray absorption spectroscopy, the decomposition reaction of the large chemical structure of the PAG anion should be taken in account in addition of ionization reaction. However, if the decomposition reaction occur, the acid diffusion length will become shorter than that as expected. It is found that the Imidate-type of anion of PAG has high sensitivity and short diffusion length. The chemical reaction analysis by the soft x-ray absorption spectroscopy using the synchrotron radiation with the combination analysis of the acid diffusion are useful method for the mitigation of high sensitivity and low LWR.

• The Society of Photopolymer Science and Technology (SPST)の論文

著者

• Muramatsu Yasuji

  Graduate School Of Engineering University Of Hyogo

• Harada Tetsuo

  Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

• Kinoshita Hiroo

  Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

• Ohmori Katsumi

  Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa, Koza, Kanagawa 253-0114, Japan

• Yamaguchi Masato

  Center for Endovascular Therapy, Kobe University Graduate School of Medicine, Kobe, Hyogo, Japan

• Shiono Daiju

  Tokyo Ohka Kogyo

• Emura Kazuya

  Center for EUVL, LASTI, University of Hyogo

• Haruyama Yuichi

  Center for EUVL, LASTI, University of Hyogo

• Sato Kazufumi

  Tokyo Ohka Kogyo

• Watanabe Takeo

  Graduate School of Engineering, University of Hyogo

• Tanino Hirohito

  Center for EUVL, LASTI, University of Hyogo

• Fukui Tsubasa

  Center for EUVL, LASTI, University of Hyogo

関連論文

• Soft X-ray absorption spectra in the CK region of carbon black and spectral analysis using the discrete variational Xα method
• Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy
• Soft X-ray absorption spectra in the CK region of carbon black and spectral analysis using the discrete variational Xα method
• Quantitative and chemical-state analyses of surface oxygen on graphite oxides using total-electron-yield soft X-ray absorption spectroscopy
• Decomposition Analysis of Chemically Amplified Resists for Improving Critical Dimension Control
• Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
• Defect Characterization of an Extreme-Ultraviolet Mask Using a Coherent Extreme-Ultraviolet Scatterometry Microscope
• Critical Dimension Measurement of an Extreme-Ultraviolet Mask Utilizing Coherent Extreme-Ultraviolet Scatterometry Microscope at NewSUBARU
• Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
• Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness
• Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU
• Phase Imaging of Extreme-Ultraviolet Mask Using Coherent Extreme-Ultraviolet Scatterometry Microscope
• Quantitative and Fingerprint Analysis Method of Nitrogen in Graphitic Carbon Materials Using Total-Electron-Yield Soft X-ray Absorption Spectroscopy
• Iliac Leg and Abdominal Aortic Cuff Stent-Graft for Blunt Thoracic Aortic Injury in Young Patient
• Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU (Special Issue : Microprocesses and Nanotechnology)
• Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
• EUV Resist Chemical Reaction Analysis using SR
• Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
• EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement

もっと見る 閉じる

スポンサーリンク