Critical Dimension Measurement of an Extreme-Ultraviolet Mask Utilizing Coherent Extreme-Ultraviolet Scatterometry Microscope at NewSUBARU
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概要
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We have developed a coherent extreme ultraviolet scatterometry microscope (CSM) for actinic inspection and metrology of an extreme ultraviolet (EUV) mask. It was installed at the BL-3 beamline of the NewSUBARU synchrotron radiation facility. The CSM is a lens-less system with no objective, and aerial images and critical dimension (CD) values are estimated using the recorded diffraction image. A method of measuring CD values by reconstruction of aerial images using diffraction intensity has been developed. A repeatability of 0.3 nm (3\sigma) with a high precision is achieved with the actinic method. We also evaluate the CD uniformity of the 88 nm lines-and-spaces patterns on the finished EUV mask, which corresponds well with that obtained by critical-dimension scanning electron microscopy (CD-SEM) results.
- 2011-06-25
著者
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Nagata Yutaka
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Harada Tetsuo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Nakasuji Masato
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Tada Masaki
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Takeo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
関連論文
- Defect Characterization of an Extreme-Ultraviolet Mask Using a Coherent Extreme-Ultraviolet Scatterometry Microscope
- Critical Dimension Measurement of an Extreme-Ultraviolet Mask Utilizing Coherent Extreme-Ultraviolet Scatterometry Microscope at NewSUBARU
- Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
- Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU
- Phase Imaging of Extreme-Ultraviolet Mask Using Coherent Extreme-Ultraviolet Scatterometry Microscope
- Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU (Special Issue : Microprocesses and Nanotechnology)
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