Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
スポンサーリンク
概要
- 論文の詳細を見る
A local etching technique using electron beams has been proposed to repair defects on an absorber pattern. In this paper, the effect of pattern contrast over a thin absorber film left on a multilayer was examined. Various residual absorber films on the multilayer were fabricated and examined using an extreme ultraviolet (EUV) microscope employed as an at-wavelength mask pattern inspection tool. As a result, the contrast decreased by 30% in the remaining thickness of 2.9 nm for half-pitch 225 nm features. The EUV microscope proved to be an effective tool for examining the post repair effects.
- 2013-04-25
著者
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Toyoda Mitsunori
Laboratory Of Soft X-ray Microscopy Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Harada Tetsuo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Takeo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Tokimasa Akifumi
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Takeo
Center for EUV Lithography, LASTI, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Yamasoe Kenjiro
Laboratory of Soft X-ray Microscopy, IMRAM, Tohoku University, Sendai 980-8577, Japan
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Toyoda Mitsunori
Laboratory of Soft X-ray Microscopy, IMRAM, Tohoku University, Sendai 980-8577, Japan
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Kinoshita Hiroo
Center for EUV Lithography, LASTI, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Hidehiro
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Amano Tsuyoshi
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Iida Susumu
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hirano Ryoichi
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Terasawa Tsuneo
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Tokimasa Akifumi
Center for EUV Lithography, LASTI, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
関連論文
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- Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
- Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU
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