Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU
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概要
- 論文の詳細を見る
Since the first presentation of extreme ultraviolet lithography (EUVL) was given in the Annual Meeting of the Japan Society of Applied Physics in 1986, a quarter of a century has passed. Currently, this technology is in the manufacturing developmental stage. The high-volume manufacturing of direct random access memory (DRAM) with a line width of 20 nm is expected in 2014. The remaining critical issues of development are a stand-alone source with higher power and a mask inspection tool for zero defects. The Center for EUVL in the University of Hyogo was established in 2010. This center is now available for utilizing some equipment, such as an EUV mask defect inspection tool, an interference lithography system, a device for the thickness measurement of the carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.
- 2013-06-25
著者
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Harada Tetsuo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Takeo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Watanabe Takeo
Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Kinoshita Hiroo
Center for EUVL, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
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Nagata Yutaka
RIKEN ASI, Wako, Saitama 351-0198, Japan
関連論文
- Defect Characterization of an Extreme-Ultraviolet Mask Using a Coherent Extreme-Ultraviolet Scatterometry Microscope
- Critical Dimension Measurement of an Extreme-Ultraviolet Mask Utilizing Coherent Extreme-Ultraviolet Scatterometry Microscope at NewSUBARU
- Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
- Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU
- Phase Imaging of Extreme-Ultraviolet Mask Using Coherent Extreme-Ultraviolet Scatterometry Microscope
- Recent Activities on Extreme Ultraviolet Lithography in NewSUBARU (Special Issue : Microprocesses and Nanotechnology)
- Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
- EUV Resist Chemical Reaction Analysis using SR
- Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope
- EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement