Observation of Residual-Type Thin Absorber Defect on Extreme Ultraviolet Lithography Mask Using an Extreme Ultraviolet Microscope

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概要

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2013-04-25

著者

Toyoda Mitsunori
Laboratory Of Soft X-ray Microscopy Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
Harada Tetsuo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
Watanabe Takeo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
Kinoshita Hiroo
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
Tokimasa Akifumi
Center for EUV Lithography, Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
Yamasoe Kenjiro
Laboratory of Soft X-ray Microscopy, IMRAM, Tohoku University, Sendai 980-8577, Japan
Watanabe Hidehiro
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Amano Tsuyoshi
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Iida Susumu
EUVL Infrastructure Development Center, Inc., Onogawa, Tsukuba, Ibaraki 305-8569, Japan
WATANABE Takeo
Center for EUV Lithography, LASTI, University of Hyogo
HARADA Tetsuo
Center for EUV Lithography, LASTI, University of Hyogo
KINOSHITA Hiroo
Center for EUV Lithography, LASTI, University of Hyogo
HIRANO Ryoichi
EUVL Infrastructure Development Center, Inc.
TERASAWA Tsuneo
EUVL Infrastructure Development Center, Inc.

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