熱酸化皮膜に覆われたアルミニウムのアノード酸化 : アノード酸化皮膜の成長挙動におよぼすアノード酸化温度の影響

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High-purity aluminum specimens were subjected to heat treatment at 823K for 3h in air, and anodized galvanostatically at Ta=293-353K with a constant current density in a neutral borate solution, and the effects of anodizing temperature (Ta) on the formation and dielectric properties of the anodic oxide films were examined.During anodizing, the rate of increase in anode potential, dEa/dta, was found to be much larger for specimens that were subjected to heat treatment than for those that were not, reaching a maximum at Ta=313-333K. The Al3+ dissolution current for the heated specimens was smaller than that for unheated specimens at all values of Ta, and increased considerably with increasing Ta.At all values of Ta except 353K, the anodic oxide films formed after thermal oxidation were composed of three layers: an outer amorphous oxide layer (thickness δo), a middle crystalline oxide layer (δc), and an inner amorphous oxide layer (δi). With increasing Ta, the δo and δi decreased but δc increased. At 353K, the film formed after thermal oxidation showed a single layer of crystalline oxide.The dielectric properties of thermal/anodic oxide films changed considerably with Ta and Ea, and this was understood to be due to penetration of the electrolyte solution into voids in the oxide films.The mechanism of film formation during anodizing after thermal oxidation is discussed in terms of the crystallization and electrochemical dissolution of the amorphous oxide layers.
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熱酸化皮膜に覆われたアルミニウムのアノード酸化 : アノード酸化皮膜の成長挙動におよぼすアノード酸化温度の影響

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