Boosted Voltage Scheme with Active Body-Biasing Control on PD-SOI for Ultra Low Voltage Operation(Digital,<Special Section>Low-Power, High-Speed LSIs and Related Technologies)
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概要
- 論文の詳細を見る
In this paper, we propose an Active Body-biasing Controlled (ABC)-Bootstrap PTL (Pass-Transistor Logic) on PD-SOI for ultra low power design. Although simply lowering the supply voltage (V_<DD>) causes a lack of driving power, our boosted voltage scheme employing a strong capacitive coupling with ABC-SOI improves a driving power and allows lower voltage operation. We also present an SOI-SRAM design boosting the word line (WL) voltage higher than V_<DD> in short transition time without dual power supply rails. Simulation results have shown improvement in both the delay time and power consumption.
- 社団法人電子情報通信学会の論文
- 2007-04-01
著者
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Tada Akira
Renesas Technology Corp.
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NUMA Masahiro
Graduate School of Engineering, Kobe University
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Maegawa Shigeto
Renesas Technology Corp.
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Numa Masahiro
Graduate School Of Science And Technology Kobe University
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Numa Masahiro
Graduate School Of Engineering Kobe University
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Ipposhi Takashi
Renesas Technology Corp.
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Kitamura Masayuki
Graduate School Of Science And Technology Kobe University
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Iijima Masaaki
Graduate School Of Science And Technology Kobe University
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Tada A
Renesas Technology Corp.
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