Plasma Chemical Vapor Deposition of TiB_2(Surface Processing)
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概要
- 論文の詳細を見る
Low temperature deposition of TiB_2 has been investigated by means of a direct current discharge type plasma assisted CVD process in TiCl_4+BCl_3+H_2 reactant gas system on the molybdenum sheet as a substrate. TiB_2 film was deposited on Mo substrate at 773K for the wide gas flowrate ratio of BCl_3/TiCl_4, r, ranging from 1.0 to 10 under the condition of total gas pressure: 133Pa, gas flowrate of TiCl_4: 10SCCM and H_2: 800SCCM. Especially, for flowrate ratio of r=2 to 8, adhesive and dense TiB_2 film with almost stoichiometric composition was successfully deposited without no spalling and cracking. Film hardness and deposition rate were increased as the increase of flowrate ratio, r and maximum values of about Hv3500 and 4.5μm/h, respectively were obtained at r=6 to 8.
- 大阪大学の論文
著者
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MATSUDA Fukuhisa
Osaka University
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Nakata Kazuhiro
Osaka Univ. Ibaraki
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Ohtsubo Takeshi
Osaka University:(present Office)showa Aluminum Corporation
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Matsuda Fukuhisa
Osaka Univ.
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