Phases of the Initialized AgInSbTe Phase Change Optical Recording Films : Optics and Quantum Electronics

スポンサーリンク

概要

• 論文の詳細を見る

• The Ag-In-Sb-Te active layer transformed into different phases after applying different initialization powers ranging from 150mW to 900mW. With an initialization power of 250mW, the rhombohedral Sb crystalline phase was formed. For higher initialization powers, i.e., 350mW or 450mW, the AgSbTe_2 crystalline phase and the newly proposed fcc Sb crystalline phase started to form. For initialization powers higher than or equal to 550mW, no rhombohedral Sb phase was observed.

• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Chou Lih-hsin

  Department Of Materials Science And Engineering Narional Tsing Hua University

• Chang Yem-yeu

  Department Of Materials Science And Engineering Narional Tsing Hua University

• CHAI Yeong-Cherng

  Department of Materials Science and Engineering, Narional Tsing Hua University

• WANG Shiunn-Yeong

  Lead Data Inc.

• Chai Yeong-cherng

  Department Of Materials Science And Engineering Narional Tsing Hua University

関連論文

• Simulation Study of Phase-Change Optical Recording Disks
• Jitter Raising Mechanisms for Compact Disk(CD)-Rewritable at Quadruple CD Velocity
• Thermally Activated Conductivity of Hydrogenated Amorphous Carbon Films Induced by Argon Plasma Bombardment
• Phases of the Initialized AgInSbTe Phase Change Optical Recording Films : Optics and Quantum Electronics
• Erasing Mechanisms of Ag-In-Sb-Te Compact Disk(CD)-Rewritable
• Microstructural Effects of Recording Marks on Erasing in AgInSbTe Phase-Change Optical Disk
• Crystallization of Ag–In–Sb–Te Phase-Change Optical Recording Films
• Laser-Induced Crystallization in AgInSbTe Phase-Change Optical Disk
• Microstructural Effects of Recording Marks on Erasing in AgInSbTe Phase-Change Optical Disk

スポンサーリンク