Erasing Mechanisms of Ag-In-Sb-Te Compact Disk(CD)-Rewritable

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概要

• 論文の詳細を見る

• The erasing mechanisms of Ag-In-Sb-Te Compact Disk(CD)-Rewritable at CD 2X and CD 4X are studied by employing the transmission electron microscopy(TEM). The mechanisms of laser-induced crystallization vary with linear velocity as well as erase power. Under CD 2X recording, erasing is proceeded with nucleation and growth mechanism at low erase laser power. However, it is the direct grain growth that controls the mechanism of erasing at higher erase power. Under CD 4X recording, the erasing is dominated by direct grain growth originated from the interface between amorphous marks and their neighboring crystalline region, and the erase power determines the location where the grain growth begins.

• 社団法人応用物理学会の論文
• 2000-04-01

著者

• Chou Lih-hsin

  Department Of Materials Science And Engineering Narional Tsing Hua University

• Chang Yem-yeu

  Department Of Materials Science And Engineering National Tsing Hua University

• Chang Yem-yeu

  Department Of Materials Science And Engineering Narional Tsing Hua University

関連論文

• Simulation Study of Phase-Change Optical Recording Disks
• Jitter Raising Mechanisms for Compact Disk(CD)-Rewritable at Quadruple CD Velocity
• Thermally Activated Conductivity of Hydrogenated Amorphous Carbon Films Induced by Argon Plasma Bombardment
• Phases of the Initialized AgInSbTe Phase Change Optical Recording Films : Optics and Quantum Electronics
• Erasing Mechanisms of Ag-In-Sb-Te Compact Disk(CD)-Rewritable
• Microstructural Effects of Recording Marks on Erasing in AgInSbTe Phase-Change Optical Disk
• Laser-Induced Crystallization in AgInSbTe Phase-Change Optical Disk
• Microstructural Effects of Recording Marks on Erasing in AgInSbTe Phase-Change Optical Disk

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