pn接合ダイオードにおける少数キャリア蓄積効果の解析

概要

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Minority carrier lifetime of a Si photodiode is estimated from step recovery of reverse current which is caused by previous minority carrier injection with forward bias. The junction voltage (V_J) of the diode still remains forward direction during the recovery time (t_r) because the maximum reverse-current value is limited by series resistance (Rs). When the V_J becomes negative, the reverse current abruptly decreases until the injected minority carriers are completely swept out. The capacitance change with reverse bias voltage (C-V) characteristic and current change with forward voltage (I-V) characteristic were also measured. From those measurements, values of diode ideal factor (n value), diffusion potential (Φd), carrier concentration depth profile (n(x)) and reverse current value by capacitance component of the diode (I_C) are obtained. The procedure for obtaining a correct values is discussed.
鈴鹿工業高等専門学校の論文
2006-02-28