Power- and Polarization-Dependences of Coherent Phonons of Tetrahedrally Bonded Semiconductors(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
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概要
- 論文の詳細を見る
Generation of coherent optical phonons in GaAs and Ge are systematically investigated by pump-probe reflectivity measureents. While the amplitude of the coherent optical phonon of Ge increases linearly with increasing optical excitation density, that of the coherent LO phonon of GaAs shows a saturation above a certain optical density. The coherent optical phonon of Ge follows the Raman selection rule, while that of GaAs is generated isotropically regardless of pump polarization. These differences are explained by different generation mechanisms of coherent phonons; impulsive stimulated Raman scattering and transient depletion field screening.
- 社団法人日本物理学会の論文
- 2006-08-15
著者
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Ushida Kiminori
Riken (the Institute Of Physical And Chemical Research)
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KITAJIMA Masahiro
National Research Institute for Metals
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ISHIOKA Kunie
National Research Institute for Metals
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Ishioka Kunie
National Institute For Materials Sciences Japan.
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Izumi K
National Institute For Materials Science
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Ishioka K
National Res. Inst. Metals Tsukuba Jpn
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Katagiri M
National Institute For Materials Science
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Kitajima Masahiro
National Institute For Materials Sciences Japan.
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Ishioka Kunie
National Institute for Materials Science
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Kitajima Masahiro
National Defense Academy of Japan, Yokosuka, Kanagawa 239-8686, Japan
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Ushida Kiminori
RIKEN
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