Surface Patterning Using Blister Exfoliation Induced by Electron Irradiation
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概要
- 論文の詳細を見る
The exfoliation of surface blisters was investigated as a candidate for a novel surface patterning method. Surface blisters were prepared by H ion implantation into a Si(100) surface. After blister formation, the surface was oxidized. The oxidized blistered surface was irradiated using a focused electron beam. Electron irradiation for 10 min. at an insident energy of 5 keV caused the exfoliation of the blisters. Local exfoliation of the oxidized blistered surface allowed surface patterning of both the bare and oxidized surfaces; that is, the patterning of both Si and Si oxide. This technique thus makes it possible to fabricate surface patterns.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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ITAKURA Akiko
National Institute for Materials Science (NIMS)
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Igarashi Shinichi
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kitajima Masahiro
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kitajima Masahiro
National Defense Academy of Japan, Yokosuka, Kanagawa 239-8686, Japan
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